Optoelectronic semiconductor device

ABSTRACT

An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.

REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 15/256,263,filed Sep. 2, 2016, which is a continuation of application Ser. No.12/562,917, filed Sep. 18, 2009, now U.S. Pat. No. 9,508,902, which is acontinuation-in-part of application Ser. No. 12/073,284, filed Mar. 4,2008, now U.S. Pat. No. 8,097,897, which is a continuation-in-part ofapplication Ser. No. 11/160,354, now U.S. Pat. No. 7,385,266, filed Jun.21, 2005, which is a continuation-in-part of application Ser. No.10/906,458, now U.S. Pat. No. 7,355,210, filed Feb. 21, 2005, and claimsthe right of priorities based on Taiwan application Ser. No. 097135935,filed Sep. 18, 2008; Ser. No. 097135936, filed Sep. 18, 2008; and Ser.No. 098118503, filed Jun. 4, 2009, the content of which are herebyincorporated by reference. U.S. Ser. No. 12/562,917 is also acontinuation-in-part of application Ser. No. 12/292,593 filed on Nov.21, 2008, now U.S. Pat. No. 8,188,505.

TECHNICAL FIELD

The application relates to an optoelectronic semiconductor device, andmore particularly to an optoelectronic semiconductor device with acontact layer, discontinuous regions and the pattern of thediscontinuous regions.

DESCRIPTION OF BACKGROUND ART

The conventional light emitting diode structure includes a growthsubstrate, an n-type semiconductor layer, a p-type semiconductor layerand a light-emitting layer between the two semiconductor layers. Areflecting layer used for reflecting the light from the light-emittinglayer could be formed selectively in this structure. In order to improveat least one of the optical property, the electrical property, and themechanical property in the light emitting diode, one adequately selectedmaterial would be used to substitute the growth substrate as a carrierto carry the structure except for the growth substrate, for example:metal or silicon substrate could be used to replace the sapphiresubstrate for growing nitride. The growth substrate could be removed byetching, polishing or laser-removing. However, the growth substratecould be also reserved entirely or partly and combined with the carrier.Besides, a transparent oxide could also be integrated in the lightemitting diode structure to promote the current spreading.

The applicant disclosed one light-emitting device 100 with highlight-emitting efficiency in TW Pat. No. I237903. As shown in FIG. 1,the light-emitting device 100 includes a sapphire substrate 110, anitride buffer layer 120, an n-type nitride semiconductor stack 130, anitride light-emitting layer of a multiple quantum-well structure 140, ap-type nitride semiconductor stack 150, and a transparent conductiveoxide layer 160. Besides, a plurality of hexagonal-pyramid cavities 1501formed on the surfaces where the p-type nitride semiconductor stack 150facing the transparent conductive oxide layer 160. The inner surfaces ofthe hexagonal-pyramid cavities 1501 are easier to form the ohmic contactregion with the transparent conductive oxide layer 160 wherein thematerial of the transparent conductive oxide layer 160 can be indium tinoxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zincoxide, zinc aluminum oxide, or zinc tin oxide. Therefore, the forwardvoltage of the light-emitting device 100 keeps lower and thelight-extracting efficiency is also improved by the hexagonal-pyramidcavities 1501.

ITO could be formed on the hexagonal-pyramid cavities 1501 of either orboth of the semiconductor stacks by electron beam evaporation orsputtering. ITO with different forming method may show difference in theoptical property, electrical property, or both, and the relatedreference could be referred to Taiwan Application No. 096111705, whichis incorporated herein by reference by the same applicant. In FIG. 2,under a scanning electron microscope (SEM), the hexagonal-pyramidcavities 1501 are not fully filled with ITO particles by the electronbeam evaporation and a lot of space formed between the particles. Thespace may confine the light to the light-emitting device and make thelight being absorbed by the surrounding ITO gradually. Or there is themedium such as air with the smaller refractive index than that of ITOexisting in the space, which may cause the total reflection at theboundary of the materials so the light could not leave the ITO layer andbeing absorbed by the surrounding ITO gradually.

In addition, C. H. Kuo et al. disclosed the relation between the ITOtransmittance and light wavelength in the paper entitled “Nitride-basednear-ultraviolet LEDs with an ITO transparent contact” (MaterialsScience and Engineering B, 2004). When the wavelength is smaller than420 nm, the ITO transmittance tends to decrease rapidly, and is evenlower than 70% when the wavelength is 350 nm. ITO has the transmittancehigher than 80% in the blue light wavelength region, but thetransmittance in UV or near-UV region is not good enough. Therefore,transparent oxide material such as ITO commonly used in thesemiconductor light-emitting device has more space to improve for theperformance in optics and electricity.

SUMMARY OF THE DISCLOSURE

An optoelectronic semiconductor device in accordance with an embodimentof present application includes a conversion unit having a first side;an electrical connector; a contact layer having an outer perimeter; andat least three successive discontinuous regions formed along the outerperimeter and having at least one different factor; wherein theelectrical connector, the contact layer, and the discontinuous-regionsare formed on the first side of the conversion unit.

Optoelectronic semiconductor devices in accordance with otherembodiments of present application are disclosed as the following:

The factor in the optoelectronic semiconductor device includes theangle, the length, the width, the depth, or the distance. The contactpoint in the optoelectronic semiconductor device includes a root part, abranch part and an end part. The contact point in the optoelectronicsemiconductor device includes a region connecting to the outer circuit.The contact point in the optoelectronic semiconductor device includes atleast one intersection point with the discontinuous regions in oneprojection direction.

The optoelectronic semiconductor device further includes a currentblocking region, which is disposed under at least one of thediscontinuous regions. Each discontinuous region in the optoelectronicsemiconductor device includes only one opening at the outer perimeter.The discontinuous region in the optoelectronic semiconductor deviceincludes at least one current blocking region.

An optoelectronic semiconductor device in accordance with anotherembodiment of present application includes a conversion unit; a firstelectrical connector adjacent to the conversion unit; a secondelectrical connector constructing one of the two ends of a currentchannel with the first electrical connector; a contact layer having anouter perimeter; and a plurality of discontinuous regions are formedfrom the outer perimeter and are substantially conformed with the shapeof the electrical connector.

Optoelectronic semiconductor devices in accordance with otherembodiments of present application disclose as the following:

The distances from each discontinuous region in the optoelectronicsemiconductor to the nearest electrical connector are substantially thesame. The first electrical connector and the second electrical connectorin the optoelectronic semiconductor device could be on the opposite sideof the conversion unit. The first electrical connector and the secondelectrical connector in the optoelectronic semiconductor device could beon the same side of the conversion unit. The optoelectronicsemiconductor device further includes an ohmic contact region disposedunder the contact layer, the discontinuous region, or both of them.

At least one of the discontinuous regions in the optoelectronicsemiconductor device deviates from the overall variation tendency. Atleast one of the first electrical connector and the second electricalconnector is in bilateral symmetry. At least two of the discontinuousregions in the optoelectronic semiconductor device have a common openingat the outer perimeter.

An optoelectronic semiconductor device in accordance with anotherembodiment of present application includes a conversion unit having afirst side; an electrical connector disposed on one side of theconversion unit; a contact layer having an outer perimeter; and aplurality of discontinuous regions arranged from the outer perimetertoward the electrical connector and presenting an irregular variation inone dimension.

Optoelectronic semiconductor devices in accordance with otherembodiments of present invention disclose as the following:

The contact layer and the discontinuous region are disposed between theelectrical connector and the conversion unit. The discontinuous regionin the optoelectronic semiconductor device has discontinuity incharacteristics including at least one of the geometry, the material,the physical property, and the chemical property. The optoelectronicsemiconductor device further includes an ohmic contact region disposedunder the contact layer, the discontinuous region, or both of them andincluding a protruding space, a depressive space, or both of them, thegeometry of which is at least one of the pyramid, the cone, or thefrustum.

An optoelectronic semiconductor device in accordance with an embodimentof present application includes a substrate having an area larger orequal to 45 mil×45 mil; a first electrical connector including: a firstroot part electrically connecting to two or more end parts; and a secondroot part separating from the first root part and electricallyconnecting to two or more end parts; a second electrical connectorincluding at least two root parts and a plurality of end parts; and aconversion unit disposed between the substrate and the second electricalconnector; wherein at least one of the end parts from the secondelectrical connector is existing between any two adjacent end parts fromthe first electrical connector.

Besides, the embodiment in the application also discloses as thefollowing:

The first root part and the second root part of the first electricalconnector connect to each other.

At least one of the first root part and the second root part of thefirst electrical connector in the optoelectronic semiconductor deviceelectrically connects to at least one of the end parts by at least onebranch part.

The second electrical connector in the optoelectronic semiconductordevice further includes a branch part including a first end connectingto at least one of the two root parts, a second end, and a trunkconnecting to at least one of the end parts.

The optoelectronic semiconductor device further includes a currentblocking region which is disposed under the second electrical connector.

The optoelectronic semiconductor device further includes a platformwhere the first electrical connector is formed.

The optoelectronic semiconductor device further includes a contact layerwhich is disposed between the second electrical connector and theconversion unit and includes a discontinuous region.

A current channel in accordance with an embodiment of presentapplication provides a current passing through a conversion unit andincludes a first electrical connector; and a second electrical connectorincluding at least two root parts and plurality of end parts; whereinthe first electrical connector includes a first root part electricallyconnecting to two or plurality of end parts; a second root partseparating from the first root part connects to two or plurality of endparts; and at least one of the end parts of the second electricalconnector is existing between any two adjacent end parts of the firstelectrical connector.

The embodiment in the invention also discloses as the following:

The conversion unit in the current channel includes a first surface anda second surface; the first surface electrically connects to the firstelectrical connector and the second surface electrically connects to thesecond electrical connector.

The two root parts of the second electrical connector in the currentchannel connect to each other.

An optoelectronic semiconductor device comprises a substrate; asemiconductor system including a first conductivity layer, a secondconductivity layer, and a conversion unit between the first conductivitylayer and the second conductivity layer, wherein the first conductivitylayer is closer to the substrate than the second conductivity layer isto the substrate, and the second conductivity layer comprises a topsurface perpendicular to a thickness direction of the semiconductorsystem, and in a top view of the semiconductor system, an outline of thefirst conductivity layer surrounds an outline of the second conductivitylayer; a first electrical connector on the first conductivity layer ofthe semiconductor system; a second electrical connector comprising ashape formed on the second conductivity layer of the semiconductorsystem; and a contact layer formed on the top surface of the secondconductivity layer and having an outer perimeter at an inner side of theoutline of the second conductivity layer in the top view of thesemiconductor system, wherein the contact layer comprises adiscontinuous region exposing the top surface of the second conductivitylayer, the discontinuous region is formed along the shape of the secondelectrical connector.

An optoelectronic semiconductor device comprises a substrate; asemiconductor system including a first conductivity layer, a secondconductivity layer, and a conversion unit between the first conductivitylayer and the second conductivity layer, wherein the first conductivitylayer is closer to the substrate than the second conductivity layer isto the substrate, and the second conductivity layer comprises a topsurface perpendicular to a thickness direction of the semiconductorsystem, and in a top view of the semiconductor system, an outline of thefirst conductivity layer surrounds an outline of the second conductivitylayer; an electrical connector formed on the semiconductor system; acurrent blocking layer discontinuously formed under the electricalconnector; and a contact layer formed on the top surface of the secondconductivity layer and having an outer perimeter extending around anentire outer edge of the contact layer and being at an inner side of theoutline of the second conductivity layer in the top view of thesemiconductor system, wherein the contact layer comprises adiscontinuous region exposing the top surface of the second conductivitylayer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a high light-emitting efficiency device disclosed inTaiwan Pat. No. I237903 by the applicant.

FIG. 2 illustrates a photograph of the ITO particles formed by theelectron beam evaporation under the scanning electron microscope.

FIG. 3 illustrates a structure of an optoelectronic semiconductor devicein accordance with an embodiment of present application.

FIG. 4 illustrates a structure of an optoelectronic semiconductor devicein accordance with another embodiment of present application.

FIG. 5 illustrates a structure of a part of an optoelectronicsemiconductor device in accordance with an embodiment of presentapplication.

FIG. 6 illustrates a structure of a part of an optoelectronicsemiconductor device in accordance with another embodiment of presentapplication.

FIG. 7 illustrates a structure of a part of an optoelectronicsemiconductor device in accordance with another embodiment of presentinvention.

FIG. 8 illustrates a structure of a part of an optoelectronicsemiconductor device in accordance with another embodiment of presentapplication.

FIG. 9 illustrates a structure of a part of an optoelectronicsemiconductor device in accordance with another embodiment of presentapplication.

FIG. 10 illustrates a structure of a part of an optoelectronicsemiconductor device in accordance with another embodiment of presentapplication.

FIG. 11 illustrates a top view of a part of an optoelectronicsemiconductor device in accordance with an embodiment of presentapplication.

FIG. 12 illustrates a top view of a part of an optoelectronicsemiconductor device in accordance with another embodiment of presentapplication.

FIG. 13 illustrates a top view of a contact layer of an optoelectronicsemiconductor device in accordance with an embodiment of presentapplication.

FIG. 14 illustrates a top view of a contact layer of an optoelectronicsemiconductor device in accordance with another embodiment of presentapplication.

FIG. 15 illustrates a top view of a contact layer of an optoelectronicsemiconductor device in accordance with another embodiment of presentapplication.

FIG. 16 illustrates a top view of an optoelectronic semiconductor devicein accordance with an embodiment of present application.

FIG. 17 illustrates a top view of an optoelectronic semiconductor devicein accordance with another embodiment of present application.

FIG. 18 illustrates a top view of an optoelectronic semiconductor devicein accordance with another embodiment of present application.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The embodiments are described hereinafter in accompany with drawings.

FIG. 3 illustrates an optoelectronic semiconductor device including asemiconductor system formed on a substrate. A semiconductor system suchas a semiconductor device, equipment, product, circuit, or applicationcan proceed or induce the light energy and electrical energy transfer.Specifically speaking, a semiconductor system includes at least one of alight-emitting diode (LED), a laser diode (LD), a solar cell, a liquidcrystal display, or an organic light-emitting diode. The phrase“semiconductor system” in the specification does not require that allthe sub-systems or units in the system are manufactured by semiconductormaterials. Other non-semiconductor materials such as metal, oxide,insulator and so on could also be selectively integrated in thissemiconductor system.

In accordance with one embodiment in the application, a semiconductorsystem includes at least a first conductivity layer 13, a conversionunit 14, and a second conductivity layer 15. The first conductivitylayer 13 and the second conductivity layer 15 are two single-layerstructures or two multiple layers structure (“multiple layers” means twoor more than two layers) having different electrical properties,polarities, dopants for providing electrons or holes respectively. Ifthe first conductivity layer 13 and the second conductivity layer 15 arecomposed of the semiconductor materials, the conductivity can becomposed of any two of p-type, n-type, and i-type. The conversion unitdisposed between the first conductivity layer 13 and the secondconductivity layer 15 is a region where the light energy and theelectrical energy could transfer or could be induced to transfer. Thosetransferring the electrical energy to the light energy are alight-emitting diode, a liquid crystal display, or an organiclight-emitting diode; those transferring the light energy to theelectrical energy are a solar cell or an optoelectronic diode.

Taking the light-emitting diode as an example, the transferred lightemission spectrum could be adjusted by changing the physical or chemicalarrangement of one layer or more layers in the semiconductor system. Thecommonly used materials are the series of aluminum gallium indiumphosphide (AlGaInP), the series of aluminum gallium indium nitride(AlGaInN), the series of zinc oxide (ZnO) and so on. The conversion unitcan be a single heterostructure (SH), a double heterostructure (DH), adouble-side double heterostructure (DDH), or a multi-quantum well (MWQ).Besides, the wavelength of the emitting light could also be adjusted bychanging the number of the pairs of the quantum well.

Substrate 11 is used for growing or carrying the semiconductor system,and the suitable material includes but is not limited to germanium (Ge),gallium arsenide (GaAs), indium phosphide (InP), sapphire, siliconcarbide (SiC), silicon (Si), lithium aluminum oxide (LiAlO₂), zinc oxide(ZnO), gallium nitride (GaN), aluminum nitride (AlN), glass, composite,diamond, CVD diamond, diamond-like carbon (DLC) and so on.

A transition layer 12 could be optionally formed between the substrate11 and the semiconductor system. The transition layer 12 between twomaterial systems is a material system transiting the substrate materialsystem to the semiconductor material system. Regarding the structure ofthe light-emitting diode, on the one hand, the transition layer is thematerial layer such as the buffer layer and so on used to reduce thelattice mismatch between two material systems. On the other hand, thetransition layer could also be a single layer, multiple layers, or astructure to combine two materials or two separated structures where thematerial can be organic, inorganic, metal, semiconductor and so on, andthe structure can be a reflection layer, a heat conduction layer, anelectrical conduction layer, an ohmic contact layer, an anti-deformationlayer, a stress release layer, a stress adjustment layer, a bondinglayer, a wavelength converting layer, a mechanical fixing structure andso on.

A contact layer 16 could also be optionally formed on the secondconductivity layer 15. The contact layer is disposed on the side of thesecond conductivity layer 15 far apart from the conversion unit 14.Specifically speaking, the contact layer could be an optical layer, anelectrical layer or the combination of the two. An optical layer couldchange the electromagnetic radiation or the light from or entering theconversion unit 14. The phrase “change” here means to change at leastone optical property of the electromagnetic radiation or the light. Theabovementioned property includes but is not limited to the frequency,the wavelength, the intensity, the flux, the efficiency, the colortemperature, the rendering index, the light field, and the angle ofview. An electrical layer can change or produce the tendency to changeat least one of the value, the density, or the distribution of thevoltage, the resistance, the current, or the capacitance between anypair of the opposite sides of the contact layer 16. The compositionmaterial of the contact layer 16 includes at least one of oxide,conductive oxide, transparent oxide, oxide with 50% or highertransmittance, metal, relatively transparent metal, metal with 50% orhigher transmittance, organic material, inorganic material, fluorescentmaterial, phosphorescent material, ceramic, semiconductor, dopedsemiconductor, and undoped semiconductor. In certain applications, thematerial of the contact layer is at least one of indium tin oxide (ITO),cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zincaluminum oxide, and zinc tin oxide. If the material is the relativelytransparent metal, the thickness is about 0.005 μm˜0.6 μm, 0.005 μm˜0.5μm, 0.005 μm˜0.4 μm, 0.005 μm˜0.3 μm, 0.005 μm˜0.2 μm, 0.2 μm˜0.5 μm,0.3 μm˜0.5 μm, 0.4 μm˜0.5 μm, 0.2 μm˜0.4 μm, or 0.2 μm˜0.3 μm.

In some situations, an ohmic contact region 151 can be formed on thesecond conductivity layer 15. If the second conductivity layer 15contacts with the contact layer 16 by the ohmic contact region 151directly or indirectly, an ohmic contact could be formed therebetween,or could decrease at least one of the driving voltage, the thresholdvoltage, and the forward voltage in the optoelectronic semiconductordevice 10. The possible configuration of the ohmic contact region 151 isa protrusion or a depression. The depressed ohmic contact region 151 isshown in FIG. 3, and the protruded ohmic contact region 151 is shown inFIG. 4. The possible geometry of the depressed space is pyramid, cone,frustum, pillar, cylinder, hemisphere, irregularity or any combinationthereof. The possible geometry of the protruded space is pyramid, cone,frustum, pillar, cylinder, hemisphere, irregularity or any combinationthereof. Besides those composed of single same or similar protrusion ordepression as shown in the figures, the ohmic contact region 151 canalso be composed of the combination of the protrusions and thedepressions. In one embodiment, the protruded space, the depressedspace, or both of the two can be of hexagonal-pyramid. At least a partof where the contact layer 16 contacts with the ohmic contact region 151forms the ohmic contact.

The specific lattice direction or the surface energy level of theinclined surfaces on the pyramid can be one possible reason for formingthe ohmic contact or the lower potential energy barrier. In addition,where the parts on the surfaces of the second conductivity layer 15 notformed the ohmic contact region 151 can form a poorer ohmic contact,non-ohmic contact, or schottky contact with the contact layer 16.However, these parts do not exclude the possibility of forming the ohmiccontact. The background of forming the ohmic contact and some relatedembodiments can be referred to TW. Pat. No. I237903, which isincorporated herein by reference by the same applicant.

Besides as a continuous single layer or multiple layers, the contactlayer 16 can be a discontinuous or patterned single layer or multiplelayers. The related reference can be referred to Taiwan Application No.096111705, which is incorporated herein by reference by the sameapplicant. “Discontinuous” herein means at least one of the geometry,material, physical property, and chemical property is discontinuous. Thegeometric discontinuity means at least one of the length, the thickness,the depth, the width, the period, the outer shape, the inner structureis discontinuous. The discontinuity in material means that at least oneof the density, the composition, the concentration, the manufacturemethod is discontinuous. The discontinuity in physical property means atleast one of the electrical property, the optical property, thethermostatic property, the mechanical property is discontinuous. Thediscontinuity in chemical property means at least one of the dopantmaterial, the activity, the acidity, the alkalinity is discontinuous. Asshown in FIGS. 3 and 4, there is a discontinuous region 161 formed onthe contact layer 16. If the material is discontinuous, the material inthe discontinuous region 161 could not form the ohmic contact with thesecond conductivity layer 15 and/or the ohmic contact region 151. Theoptical property of the discontinuous region 161 could be also differentfrom the contact layer 16. The optical property includes thetransmittance, the refractive index, or the reflective index. Byselecting the adequate material for the discontinuous region 161, theintensity of the light or of the energy flux leaving or entering theconversion unit 14 could be enhanced. For example, if the discontinuousregion 161 is the air gap, the light from the conversion unit 14 canleave the semiconductor system 10 from the air gap and not be absorbedby the contact layer 16. If there is the regular pattern, the irregularpattern, the rough pattern, the photonic crystals, or any combinationthereof formed on at least one of the first conductivity layer 13, theconversion unit 14, and the second conductivity layer 15, the intensityof the light or of the energy flux leaving or entering the discontinuousregion 161 can also be enhanced. As shown in FIGS. 3 and 4, if thesecond conductivity layer 15 contacting with the discontinuous region161 has the larger refractive index, the light extracted from thediscontinuous region 151 can be enhanced because the ohmic contactregion 161 can destroy the total reflection of the light at therefractive surfaces.

If the structure of the optoelectronic semiconductor device 10 issimilar to those shown in the FIGS. 3 and 4, a second electricalconnector 17 can be optionally formed on the second conductivity layer15 or on the contact layer 16, and a first electrical connector 18 canbe optionally formed on the first conductivity layer 13. The electricalconnector can be a single-layer or a multiple-layer structure serving asan interface where the optoelectronic semiconductor device 10electrically connects to the outer circuit. The electrical connector canbe connected to the outer circuit by the wiring or be bonded directlywith the outer circuit.

Besides, the electrical connector can also be disposed on the other sideof the optoelectronic semiconductor device 10. For example, the firstelectrical connector 18 can be disposed under or on at least one side ofthe first conductivity layer 13, the transition layer 12, or thesubstrate 11. In other words, the first electrical connector 18 and thesecond electrical connector 17 are disposed on the opposite surfaces orthe surfaces which are vertical to each to each other. In anotherembodiment, the second electrical connector 17 can be disposed on theside surfaces of the second conductivity layer 15. In still anotherembodiment, the first electrical connector 18, the second electricalconnector 17, or both of the two can be disposed on the surfaces or theside surfaces of the first conductivity layer 13, the transition layer12, or the substrate 11 by a through hole, an insulator or both.

There are some embodiments about the electrical connector, the ohmiccontact, and the discontinuous region shown below. Although only thesecond conductivity layer 15 and the second electrical connector 17 areshown in the figures as examples, it does not restrain the followingembodiments from being adopted to the first conductivity layer 13 andthe first electrical connector 18, or for any other types of theoptoelectronic semiconductor device.

As shown in FIG. 5, the contact layer 16 is formed on the secondconductivity layer 15, the second electrical connector 17 is formed onthe contact layer 16, and the discontinuous regions 161 are formed inthe surroundings of the second electrical connector 17. The distributionof the discontinuous regions 161 is to let the current from theelectrical connector 17 flows laterally to the outer perimeter of thecontact layer 16 as far as possible, or keep the percentage change ofthe current density between the region under the electrical connector 17and the outer perimeter of contact layer 16 less than 60%, 50%, 40%,30%, 20%, or 10%. For example, the current density under the electricalconnector 17 is x A/cm², and the current density at the outer perimeterof contact layer 16 is y A/cm², and the percentage change of the currentdensity is |x−y|/(x or y which is larger) %.

FIG. 5(a) discloses two types of the discontinuous region 161 which canexist individually or simultaneously. The contact layer 16 on the rightside of the electrical connector 17 does not overlap with thediscontinuous region 161; the contact layer 16 on the left side of theelectrical connector 17 overlaps with the discontinuous region 161, anda third medium or structure exists between the contact layer 16 and thesecond conductivity layer 15. Specifically speaking, the discontinuousregion 161 or the third medium or structure is an insulator such as theair or the oxide, a poor conductor comparing with the contact layer, ora Bragg reflector or an anti-reflection layer. Besides, the refractiveindex of the third medium could be between that of the contact layer 16and the second conductivity layer 15. At least one of the contact layer16 that is under the second electrical connector 17, the secondconductivity layer 15, the conversion unit 14, the first conductivitylayer 13, the transition layer 12, and the substrate 11 can optionallyform an insulating region 152 for the current spreading outwards fromthe second electrical connector 17. The position of the insulatingregion 152 shown in the figure is only an example, not a limitation. Thesize of at least one of the contact layer 16 that is under the secondelectrical connector 17 and the insulating region 152 is equal to orslightly larger than that of the second electrical connector 17. Amongwhich, the size of the contact layer 16 that is under the secondelectrical connector 17 is the diameter of the smallest fictitiouscircle of the contact layer 16 located around or under the secondelectrical connector 17 surrounded by the discontinuous regions 161. Asshown in FIG. 5(b), the second electrical connector 17 is embedded inthe contact layer 16. As shown in FIG. 5(c), the second electricalconnector 17 is embedded in the contact layer 16, and any surface wherethe second electrical connector 17 and the contact layer 16 contact witheach other forms a regular patterned structure, an irregular patternedstructure, or the combination thereof in order to increase the contactarea between the second electrical connector 17 and the contact layer16. For example, there is a rough contact surface 171 between the secondelectrical connector 17 and the contact layer 16 in order to increasethe contact area between each other. The larger contact area can enhancethe structure stability of the electrical connector 17 or allow morecurrent pass.

Another disposition of the electrical connector is disclosed in FIGS.6(a)˜6(c) and please refer to FIG. 5 to see the disposition or thedescription of the discontinuous region 161. The second electricalconnector 17 is formed on the second conductivity layer 15 directly, inother words, there is no contact layer 16 between the second electricalconnector 17 and the second conductivity layer 15. Any surface where thesecond electrical connector 17 contact with the contact layer 16, thesecond conductivity layer 15, or both of the two has a regular patternedstructure, an irregular patterned structure, or the combination thereofin order to increase the contact area between the second electricalconnector 17 and the other part. The larger contact area can enhance thestructure stability of the electrical connector 17 or allow more currentpass. An insulating region 152 can be formed under the second electricalconnector 17. The size of the insulating region 152 is equal to orslightly larger than that of the second electrical connector 17.

An optoelectronic semiconductor device in accordance with anotherembodiment of this application is disclosed in FIG. 7. In thisembodiment, filling material 162 fills in at least part of the space ofone or more ohmic contact regions 151 in the discontinuous region 161.The optical property, the electrical property, or both of the twoproperties of the electromagnetic radiation or the light could bechanged by adjusting the distribution of the filling material 162 in theohmic contact region 151. The filling material can be at least one ofinsulator, metal, semiconductor, doped semiconductor, and wavelengthconversion material. The insulator can be oxide, inert gas, air and soon. The wavelength conversion material can be fluorescent,phosphorescent, dye, semiconductor and so on. The refractive index ofthe filling material could be between those of the materials which areon and under it. If the filling materials are particles, the sizes ofsuch should be able to be filled in the ohmic contact region 151 or besmaller in the depth, in the width or in both of it of the ohmic contactregion 151. In FIG. 7(a), all of the ohmic contact regions 151 thatcontact with the contact layer 16 and is under the second electricalconnector 17 are filled with the filling materials 162. In FIG. 7(b),some of the ohmic contact regions 151 that contact with the contactlayer 16 and is under the second electrical connector 17 are filled withthe filling materials 162, and the filling material 162 does not existin the ohmic contact regions 151 disposed in other area. As shown in thefigure, the outer perimeter of the contact layer 16 is extended into theohmic contact region 151. In FIG. 7(c), the discontinuous regions 161(shown as dotted line) include the same material as the contact layer 16and further include the filling material 162.

As shown in FIG. 8, at least a part of the electrical connector 17 isembedded in the second conductivity layer 15. In FIG. 8 (a), an ohmiccontact region 151, a regular patterned structure (not shown), anirregular patterned structure (not shown), or the combination thereofcan be optionally formed under the discontinuous regions 161. In FIG. 8(b), there is no ohmic contact region 151 under the discontinuous region161. If the ohmic contact region 151 is formed on the secondconductivity layer 15 by epitaxial growth, the ohmic contact region 151in the discontinuous region 161 could be flattened by filling in thefilling material 162 (not shown). If the ohmic contact region 151 isformed on the second conductivity layer 15 by wet etching, dry etching,or both of the two methods, an etch mask can be desposited on the regionwhere the discontinuous region 161 is expected to be formed to shieldthe surface of the second conductivity layer 15 from being etched. InFIG. 8 (c), any surfaces where the second electrical connector 17contacts with the contact layer 16, the second conductivity layer 15, orboth of the two can be a regular patterned structure, an irregularpatterned structure, or the combination thereof in order to increase thecontact area between the second electrical connector 17 and the otherpart.

As shown in FIG. 9, at least a part of the electrical connector 17 isembedded in the second conductivity layer 15 and there is no ohmiccontact region 151 under the discontinuous region 161. In oneembodiment, first, the contact layer 16 is formed on the upper surfacesof the second conductivity layer 15 where the ohmic contact region 151is formed. And then, part of the contact layer 16 in accordance with thepredetermined pattern is removed until most of the ohmic contact region151 in the part is almost removed as well. Accordingly, the formation ofthe discontinuous region 161 and the removal of the ohmic contact region151 are combined into one series of the manufacture processes. Inanother embodiment, as shown in FIG. 9 (b), any inner surfaces of thediscontinuous region 161 can be the regular patterned structure, theirregular patterned structure, or the combination thereof. Any surfaceswhere the second electrical connector 17 contacts with the contact layer16, the second conductivity layer 15, or both of the two can be aregular patterned structure, an irregular patterned structure, or thecombination thereof in order to increase the contact area between thesecond electrical connector 17 and the other part.

As shown in FIG. 10, the ohmic contact region 151 is formed on thesecond conductivity layer 15 in different sizes, and the types of theohmic contact region 151 can be referred to the before-mentioneddescription. In some conditions, the quality and the quantity of theohmic contact between the contact layer 16 and second conductivity layer15 depend on the conditions of the inner surfaces or the outer surfacesof the ohmic contact region 151. For example, a larger surface canprovide more area for the ohmic contact formation. In FIG. 10 (a), thewidth and the depth of the ohmic contact region 151 are enlargedgradually outward from the electrical connector 17. In FIG. 10 (b), theohmic contact region 151 under the electrical connector 17 and thespecific position is filled with the filling material 162, and thedescription about the filling material 162 can be referred to thespecification and the drawing mentioned above. In FIG. 10 (c), there isno ohmic contact region 151 formed under the electrical connector 17.Herein, the “size” includes but is not limited to length, width, depth,height, thickness, radius, angle, curvature, pitch, area, or volume.

The figures mentioned above are only the illustrations for theembodiments, but not used to limit the forming position, the amounts, orthe style of the surface pattern. “Regular patterned structure” is akind of structure, which has a repeated characteristic that can beidentified in any directions on a surface wherein the characteristic canbe repeated in a constant periodicity, a variable periodicity, aquasiperiodicity, or the combination thereof “Irregular patternedstructure” is a kind of structure, which has no repeated characteristicthat can be identified in any directions on a surface and therefore thestructure could also be named after “randomly rough surface”.

FIG. 11 and FIG. 12 disclose a part of the top view of theoptoelectronic semiconductor device. In FIG. 11, the discontinuousregion 161 has a shape of circle and can be disposed in a regular arrayas shown in FIG. 11 (a), or in an interlaced array as shown in FIG. 11(b). Symbol P1 indicates the pitch between the circles and symbol D1indicates the diameter of the circle. In FIG. 12, the discontinuousregion 161 has a shape of squares and can be disposed in a regular arrayas shown in FIG. (a), or in an interlaced array as shown in FIG. (b).Symbol P2 indicates the pitch between the squares and symbol D2indicates the side length of the square. However, the discontinuousregion 161 is not limited to these two shapes. Other shapes such as therectangle, the rhombus, the parallelogram, the oblong, the triangle, thepentagon, the hexagon, the trapezoid, or the irregularity can also beadopted.

Table 1 is a summary of some results of the experiments. Theseexperiments adopt the blue 45 mil×45 mil chips produced by EpistarCorporation in Taiwan, and the structures of the chips are similar tothe optoelectronic semiconductor device 10 shown in FIG. 3 which isfurther processed to form the discontinuous region and the contact layersuch as FIGS. 11(a), 11(b), and 12(a) thereon, in other words, to formthe circular regular array, the circular interlaced array, and thesquare regular array thereon. The material of the contact layer 16 isITO formed by the electron beam evaporation, the size of the particle isabout 50 nm˜80 nm, and the refractive index is about 2. The unit of D1,D2, P1 and P2 is μm. V_(f) is the forward voltage. The ratio of the areais the percentage the area of the contact layer to the total area of thediscontinuous area. As Table 1 indicates, the area of the discontinuousarea should be adjusted appropriately to improve the brightness and tolower the V_(f). Besides, the density the discontinuous region in thecontact layer is also an adjustable parameter. X. Guo et al. disclosed amethod to calculate the distance the current dispersed between twoelectrodes (Ls) in the journal Applied Physics Letters, Vol. 78, No. 21,p. 3337, which is incorporated herein by reference. According to thereference, hypothetically speaking, if the size of the discontinuousregion is in the range of the current dispersion, the current couldenter the second conductivity region and the contact layer by leapingover a discontinuous region. Accordingly, the current could dispersefarther in the contact layer.

TABLE 1 Average Brightness Area D1 * P1 Enhancement Vf Ratio Array StyleD2 * P2 Ratio (%) Enhancement (%) Circular 16 * 4 2.30 0.10 50.24Regular Array  5.5 * 4.5 3.50 0.03 23.75 11 * 9 6.11 0.06 23.75 16 * 96.06 0.03 32.15 Circular  9 * 3 1.70 0.11 52.99 Interlaced  3.5 * 2.57.60 0.04 30.85 Array Square 16 * 4 −0.70 0.19 64.00 Regular Array 15 *5 −2.04 0.11 56.25 10 * 5 −3.06 0.02 44.44

The top views of the optoelectronic semiconductor device 10 or thecontact layer 16 for some other embodiments are shown in FIGS. 13˜18.The symbol 153 indicates a platform. However, the design, the amount, orthe scale in the figures is only for exemplary purpose and should not bea limitation of the present application. Other standards, principles,bases, indications, or teachings in accordance with this description canalso be applied in the present application.

In FIG. 13, the second electrical connector 17 includes the root part171, the branch part 172, and the end part 173 forming a current networkto lead the current to flow toward the predetermined direction. The rootpart 171 is the origin of the branch part 172 and the end part 173 inappearance and is usually the remarkable part. Therefore, the root part171 can be a checkpoint for the manufacture process or the inspectionprocess, and is surely a point to connect to the outer circuit. The endpart 173 is the end of the network without branches extending further.The branch part 172 is between the root part 171 and the end part 173.Any two parts electrically connect to or optionally physically connectto each other. For example, any two parts can connect to each other bythe outer conducting wire, the contact layer 16, the discontinuousregion 161, the intermedium, or the underlying region. Among all, the“intermedium” indicates the material in the space between two adjacentparts formed either in a manufacture process different from theprocesses of forming the parts or formed by the material at least partlydifferent from the material of one part; the “underlying region”indicates a contact region or a conductivity layer which can be acurrent channel under any one of the three parts such as the secondconductivity layer 15 or the highly doped region.

In one embodiment, the second electrical connector 17 includes only theroot part 171 and the end part 173. In other embodiments, each root part171, branch part 172, and end part 173 can connect to the underlyingregion by same or different methods, and the connecting method can referto the embodiments and the drawings shown above. Besides, a currentblocking region can be formed optionally under each part to hinder thecurrent from flowing downward or to adjust the way the current spreadingdownward. The current blocking region achieves the above-mentionedeffect by disposing an insulating material or a poor conductive materialunder the targeted region. In the figures, the amount, the shape, andthe style of the root part 171, the branch part 172, and the end part173 is only for exemplary purpose and should not be a limitation of thepresent application. For example, the second electrical connector 17 caninclude two or more root parts 171, or the branch part 172, the end part173, or the combination thereof can be optionally formed among the rootparts 171. A root part 171 can be surrounded by two or more branch parts172 or end parts 173. A branch part 172 can diverge to two or more endparts 173.

The discontinuous regions 161 are formed inward from the outer perimeter163 of the contact layer 16, and these discontinuous regions 161 do notpass through the contact layer 16, namely, every discontinuous regionhas only one opening 164 at the outer perimeter 163 of the contact layer16 and two or more discontinuous regions 161 sharing one common opening164 as shown in the dotted region. Seeing from the top view, thediscontinuous regions 161 could intersect or not intersect (not shown)the second electrical connector 17. If the discontinuous region 161intersecting second electrical connector 17 is composed of the insulatoror the poor conductor, the intersected discontinuous region 161 can beintegrated with the above-mentioned current blocking region, shown inthe hatched region in FIG. 14. The position and the size of the currentblocking region 165 shown in the figure are only for exemplary purposeand should not be a limitation of the present application.

In one embodiment, at least three discontinuous regions 161 along any orpartial range of the outer perimeter 163 are different in at least oneelement like the angle, the length, the width, the depth, or the pitch.As shown in FIG. 13, discontinuous regions 1611, 1612, and 1613 have thesame angle, length, and width, but have different pitches. In otherwords, without considering the depth, the arrangement of thediscontinuous regions 161 in this area presents an irregular variationin one dimension. The irregular variation includes the irregularvariation partly or totally, for example, an irregular variation regionbetween two regular variation regions. “Regular variation” indicatesthat the variation is a geometric variation or an arithmetic variation.In addition, the discontinuous regions 1614, 1615, and 1616 could alsohave different angles, lengths, widths, or pitches.

In FIGS. 13 and 14, the second electrical connector 17 is bilateralsymmetry. In FIG. 15, the second electrical connector 17 is asymmetry.In FIGS. 13˜15, the first electrical connector 18 is bilateral symmetryfor exemplary purpose, in other words, the first electrical connector 18could also be asymmetric. In one embodiment, the total variationtendency of the discontinuous regions 161 follows the shape of thesecond electrical connector 17 while it is possible that a fewdiscontinuous regions 161 deviate from that variation tendency. Forexample, one of the two discontinuous regions 161 surrounding the rootpart 171 or the end part 173 has a shorter length. In anotherembodiment, at least some of the discontinuous regions 161 have aboutthe same or a stable interval between the second electrical connector17. For example, the discontinuous regions 161 arranged at the two sidesof the branch part 172 have about the same interval with the branch part172, namely, the value of the pitch is under the reasonable tolerance ofthe manufacture process.

The top view of the optoelectronic semiconductor device 10 shown in FIG.16 discloses a first electrical connector 18 a, a first electricalconnector 18 b, and a second electrical connector 17. The firstelectrical connectors 18 a and 18 b are formed on the platform 153 andinclude one root part 181 and two end parts 183. Each root part 181 isadjacent to one of the corners of the platform 153 respectively. Thesecond electrical connector 17 is formed on the contact layer 16 andincludes two adjacent root parts 171 and several end parts 173. Amongwhich, two end parts 173 connect to the root parts 171 directly; theother end parts 173 connect to the three branch parts 172 respectively.The first electrical connectors 18 a and 18 b are physically separatedwith each other while interdigitating with the second electricalconnector 17 respectively. Specifically speaking, each end part 183 ofthe first electrical connectors 18 a and 18 b is formed on the platform153, extending toward the root part 171 of the second connector 17, andentering the region between the branch part 172 and the end part 173,the branch part 172 and the branch part 172, or the end part 173 and theend part 173. However, the amount of the parts in the figure is only forexemplary purpose and should not be a limitation to the presentapplication.

The physical separation of the first electrical connector 18 a and 18 bmakes the arrangement of the electrical connectors more flexible. Forexample, the first electrical connector 18 a and 18 b can be disposed onthe platforms 153 with different height or in different directions, orcan be without the connecting branch parts 172, the connecting end parts173, or both of them between two electrical connectors. If at least oneof the root part 171, the branch part 172, the end part 173 is composedof a material which can shield or consume the light energy entering orleaving the optoelectronic semiconductor device 10, the operatingefficiency of the optoelectronic semiconductor device 10 can be improvedby reducing the amount of the material. Besides, although the firstelectrical connector 18 a and 18 b in the figures form a current channelwith the second electrical connector 17 in a bilateral symmetrical form,it is not a limitation to present application. The first electricalconnector also can be in radial symmetry or in asymmetry.

The overall pattern or the partial pattern of the first electricalconnector 18 and the second electrical connector 17 can be artificial;can resemble the natural creature or the natural phenomenon such as thepattern of the veins of the leaf or the wings of an insect, or onespecific mathematic function like fractal. Although the first electricalconnector 18 a and 18 b in the drawings include only the end parts 183,it is not a limitation to this present application, namely, at least oneof the first electrical connector 18 a and 18 b could also include thebranch part (not shown). In one embodiment, if there is larger distanceor area between two adjacent parts of two different electricalconnectors, the uniformity of the current spreading can be enhanced byreasonably adding the amounts of the branch parts, the end parts, orboth. However, if the current network formed between the electricalconnectors is too dense, the effective light energy entering or leavingthe optoelectronic semiconductor device 10 is reduced.

Each root part or end part can be formed outward from the root part bythe constant distance, the different distances, the constant angle, orthe different angles. The end part can be formed outward from the branchpart by the constant distance, the different distances, or in theinterlaced form. The geometric appearance of each branch part and endpart can be a straight line, a curve, or the combination thereof. Thetype of the curve includes at least one of a hyperbola, a parabola, anellipse, a circle, a power series curve, and a helix.

As shown in FIG. 16, the total end-part amounts of the first electricalconnector 18 a and 18 b are fewer than the sum of the end-part amountsof the second electrical connector 17 (connecting to the root parts 171directly) and the branch-part amounts of the second electrical connector17 (between the root parts 171 and the end parts 173), however, it isnot a limitation of present application. In other words, the amounts ofthe major interdigital part of the first electrical connector 18 a and18 b can be more than or equal to the amounts of the major interdigitalpart of the second electrical connector 17. Moreover, the amounts of themajor interdigital part of the first electrical connector 18 a can bemore than, equal to, or less than the amounts of the major interdigitalpart of the first electrical connector 18 b.

The height, the width, or both of them of the root parts, the branchparts, or the end parts can be a constant, a gradual change, or a randomvalue. For example, the root part, the branch part, and the end parthave the same height. The root part has the largest width, the branchpart is in the middle, and the end part has the smallest one. Moreover,the sizes of any two of the first electrical connector 18 a, the firstelectrical connector 18 b or the second electrical connector 17 can bethe same, different, or partly the same. In one embodiment, theelectrical connector as shown in FIG. 16 is formed on one 45 mil×45 milor larger light emitting diode chip, among which, the height of the rootparts, the branch parts, and the end parts is 2 μm, the widths of theend parts 183 of the first electrical connectors 18 a and 18 b are 9 μmand 7 μm respectively, and the width of the second electrical connectors17 is 9 μm.

As shown in the drawing, a current blocking region 165 is further formedunder the second electrical connector 17 (shown in the dotted line) tohinder the current from flowing downward or to adjust the way thecurrent spreading downward. The current blocking region 165 achieves theabove-mentioned effect by disposing an insulating material or a poorconductive material under the targeted region (the same as the secondelectrical connector 17 shown in FIG. 16). The size of current blockingregion 165 is preferred to be equal to or slightly larger than theelectrical connector formed above but is not a limitation ofpresentation application. However, a current blocking region 165 with aninappropriate size excessively increases the operating voltage of theoptoelectronic semiconductor device 10. For example, if in a 45 mil×45mil light emitting chip mentioned in the former section, the extensionsize of the current blocking region 165 is changed from 7 μm to 5 μmcounting from the second electrical connector 17, the forward voltagecan decrease 0.02 volt. Besides, the current blocking region 165 can beoptionally formed in any single layer, multiple layers or discontinuouslayers which is/are under the electrical connector. If the currentblocking region is formed in the multiple layers, the size and the shapeis not limited to be the same.

As shown in FIG. 17, an optoelectronic semiconductor device 10 having afirst electrical connector 18 a, a first electrical connector 18 b, anda second electrical connector 17 in accordance with another embodimentis disclosed. Each of the first electrical connectors 18 a and 18 bincludes one root part 181 and two end parts 183 respectively. Thesecond electrical connector 17 includes two adjacent root parts 171, sixbranch parts 172, and several end parts 173 extending from thecorresponding branch parts. Specifically speaking, the branch partincludes one trunk 174, one first end 175, and one second end 176. Thefirst end 175 connects to the root part 171. The second end 176 isoptionally an open end. The end part 173 connects to the trunk 174.Among which, the two branch parts 172 located in the center of thedrawing partly connect to each other in appearance. Besides, theillustration of the other parts can be referred to FIG. 16.

As shown in FIG. 18, an optoelectronic semiconductor device 10 having afirst electrical connector 18 a, a first electrical connector 18 b, anda second electrical connector 17 in accordance with another embodimentis disclosed. Each of the first electrical connectors 18 a and 18 b isformed on the platform 153 and includes one root part 181 and two endparts 183 respectively, and each of the end parts 183 is on the cornerdistant from the platform 153 respectively. The second electricalconnector 17 is formed on the contact layer 16 and includes two adjacentroot parts 171 and six end parts 173. Among which, the two end parts 173located in the center of the figure partly connect to each other inappearance and the contact layer 16 forms the discontinuous regions 161in the discrete random distribution. Other embodiments about thediscontinuous regions 161 can be referred to the above-mentionedillustrations. Besides, the illustration of the other parts can bereferred to FIG. 16.

Although the drawings and the illustrations above are corresponding tothe specific embodiments individually, the element, the practicingmethod, the designing principle, and the technical theory can bereferred, exchanged, incorporated, collocated, coordinated except theyare conflicted, incompatible, or hard to be put into practice together.

Although the present application has been explained above, it is not thelimitation of the range, the sequence in practice, the material inpractice, or the method in practice. Any modification or decoration forpresent application is not detached from the spirit and the range ofsuch.

What is claimed is:
 1. An optoelectronic semiconductor device,comprising: a substrate; a semiconductor system including a firstconductivity layer, a second conductivity layer, and a conversion unitbetween the first conductivity layer and the second conductivity layer,wherein the first conductivity layer is closer to the substrate than thesecond conductivity layer is to the substrate, the second conductivitylayer comprises a top surface perpendicular to a thickness direction ofthe semiconductor system, an outline of the first conductivity layersurrounds an outline of the second conductivity layer in a top view ofthe semiconductor system, and part of the first conductivity layer isnot covered by the second conductivity layer; a first electricalconnector on the first conductivity layer of the semiconductor system; asecond electrical connector directly on the second conductivity layer ofthe semiconductor system; a contact layer comprising conductive oxide,contacting the top surface of the second conductivity layer and havingan outer perimeter extending around an entire outer edge of the contactlayer and being at an inner side of the outline of the secondconductivity layer in the top view of the semiconductor system; and atleast two discontinuous regions comprising insulator contacting the topsurface of the second conductivity layer, wherein the at least twodiscontinuous regions are formed on two sides of the second electricalconnector, and the contact layer is between the second electricalconnector and each one of the at least two discontinuous regions, andwherein the second electrical connector electrically contacts thecontact layer.
 2. The optoelectronic semiconductor device of claim 1,wherein the shape of the second electrical connector is bilateralsymmetry.
 3. The optoelectronic semiconductor device of claim 1, whereinthe second electrical connector comprises a root part and a branch partextending from the root part.
 4. The optoelectronic semiconductor deviceof claim 3, wherein the second electrical connector comprises an endpart diverged from the branch part.
 5. The optoelectronic semiconductordevice of claim 3, wherein the first electrical connector comprises aroot part and a branch part extending from the root part.
 6. Theoptoelectronic semiconductor device of claim 1, wherein the contactlayer comprises an opening to accommodate the second electricalconnector.
 7. The optoelectronic semiconductor device of claim 1,wherein the at least two discontinuous regions each comprises a top viewshape comprising circle, rectangle, rhombus, parallelogram, oblong,triangle, pentagon, hexagon or trapezoid.
 8. The optoelectronicsemiconductor device of claim 1, wherein the contact layer covers a topsurface and sidewalls of each of the at least two discontinuous regions.9. The optoelectronic semiconductor device of claim 1, wherein thesecond electrical connector comprises a plurality of root parts and aplurality of branch parts extending from each of the plurality of rootparts.
 10. The optoelectronic semiconductor device of claim 9, whereinthe plurality of root parts is connected to each other.
 11. Theoptoelectronic semiconductor device of claim 1, wherein the firstelectrical connector comprises a plurality of root parts and a pluralityof branch parts extending from each of the plurality of root parts. 12.The optoelectronic semiconductor device of claim 11, wherein theplurality of root parts is separated from each other.
 13. Theoptoelectronic semiconductor device of claim 1, wherein the outline ofthe first conductivity layer is separated from the outline of the secondconductivity layer in the top view of the semiconductor system.
 14. Theoptoelectronic semiconductor device of claim 13, wherein the outline ofthe first conductivity layer and the outline of the second conductivitylayer respectively comprises multiple sides in the top view of thesemiconductor system.
 15. The optoelectronic semiconductor device ofclaim 1, wherein the substrate comprises germanium (Ge), galliumarsenide (GaAs), indium phosphide (InP), sapphire, silicon carbide(SiC), gallium nitride (GaN) or aluminum nitride (AlN).